Detailed Silicon Transistor 2SC3357 *NPN silicon transistor *Low Noise and High Gain *Large PT in Small Package *Package: SOT-89 Silicon Transistor 2SC3357 DESCRIPTIONThe 2SC3357 is an NPN silicon epitaxial transistor designed forlow noise amplifier at VHF.
Detailed DIP NPN General Purpose Transistor Collector Current(IC): 150mA Collector to Emitter Voltage(VCEO): 50V RoHS Compliant Small Signal General Purpose Bipolar TransistorsTOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)Applications: Audio Frequency General Purpose Amplifier and Driv.
Detailed Fairchild DIP NPN Transistor Collector - Emitter Voltage(VCEO): 50V(KSD1616), 60V(KSD1616A) Collector Current(IC): 1A NPN Epitaxial Silicon General Purpose TransistorFairchild SemiconductorPNP Complement: KSB1116 / KSB1116AApplications: Audio Frequency Power Amplifier & Medium Speed Sw.
Detailed Brand name: Mitsubishi Module number:2SC2694 Frequency range: 175MHz Vdd: 12.5V NPN epitaxial planar type transistors NPN epitaxial planartype transistor designed for rf power amplifiers in VHF band mobile radio applications.Brand name: MitsubishiModule number:2SC2694Frequency ra.
Detailed FAIRCHILD Semiconductor NPN RF Transistor Collector to Emitter Voltage(VCEO): 25V Collector Cut-off Current(ICBO): 100nA Fairchild SemiconductorNPN Epitaxial Silicon RF TransistorApplications: VHF / UHF TransistorTransistor Polarity: NPNCollector to Base Voltage(VCBO): 30VCollector to Emit.
Detailed SANYO SMD NPN High-Frequency RF Transistor Collector to Emitter Voltage(VCEO): 10V Collector Current(IC): 70mA SANYO SemiconductorsNPN Epitaxial Planar Silicon TransistorHigh-Frequency DevicesUltrahigh-Frequency TransistorsApplications: VHF to UHF Wide-Band Low-Noise Amplifier Applications.
Detailed 2SA2012/2SC5565 Transistor * NPN Epitaxial Planar Silicon Transistors * Package: SOT-89 * Large current capacitance. 2SA2012/2SC5565 Transistor Applications· Relay drivers, lamp drivers, motor drivers.
Detailed TOSHIBA SMD NPN Silicon RF Transistor Collector to Emitter Voltage(VCEO): 12V Collector Current(IC): 30mA RoHS Compliant NPN Silicon RF Bipolar TransistorApplications: VHF~UHF Band Low Noise AmplifierFeatures:  Low noise figure, high gain.  NF = 1.1dB.
Detailed NPN SILICON EPITAXIAL TRANSISTOR PART NO.BCP56-T1G BRAND:ON SEMI DC: WITHIN 2 YEARS PACKAGE: REEL CONDITION: NEW.
Detailed Silicon Transistor 2SC4226 *NPN silicon transistor *Low Noise and High Gain *Small Mini Mold Package *Package: SOT-323 Silicon Transistor 2SC4226 DESCRIPTIONThe 2SC4226 is a low supply voltage transistor designed for VHF.
Detailed NEC DIP NPN Transistor Collector to Emitter Voltage(VCEO): 50V Collector Current (DC)(IC): 100mA RoHS Compliant NEC NPN Silicon Small Signal Dip TransistorThe 2SC945 is designed for use in driver stage of AF amplifier and low speed switchingFor low frequency amplification, low speed switch.
Detailed Silicon Transistor 2SC3355 *NPN silicon transistor *Low Noise and High Gain *High Power Gain *Package: TO-92 Silicon Transistor 2SC3355 FEATURESLow Noise and High GainNF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHzNF = 1.1 dB TYP., Ga = 9.0 dB TYP.
Detailed DIP NPN General Purpose Transistor Collector Current(IC): 200mA Collector to Emitter Voltage(VCEO): 40V RoHS Compliant General Purpose TransistorSmall Signal DIP NPN Bipolar TransistorThe NPN Bipolar Transistor is designed for use in linear and switching applications. The device is housed .
Detailed KN114NEAD NPN DIGITAL TRANSISTOR KN114NEAD NPN DIGITAL TRANSISTOR Description The KN114NEAD is NPN resistor-equipped transistor for general purpose switching and amplification. Features Built-in bias resistors Simplified circuit desing Reduction of component count Reduced pick and place co.
Detailed KS114NEAD NPN DIGITAL TRANSISTOR KS114NEAD NPN DIGITAL TRANSISTOR DescriptionThe KS114NEAD is NPN resistor-equipped transistor for general purpose switching and amplification.FeaturesBuilt-in bias resistorsSimplified circuit desingReduction of component countReduced pick and place costsPac.
Detailed KMBT1015 PNP EPITAXIAL PLANAR TRANSISTOR KMBT1015 PNP EPITAXIAL PLANAR TRANSISTOR DescriptionThe KMBT1015 is designed for use in driver stage of AF amplifier and general amplification.Package DimensionsSOT-23.
Copyright © 2010 Wholesale lots. All rights reserved. Contact Us:email@example.com
Processed in 0.129 second(s)